IRFW/I540A Advanced Power MOSFET

IRFW/I540A
Advanced Power MOSFET
FEATURES
BVDSS = 100 V
n Avalanche Rugged Technology
RDS(on) = 0.052 Ω
n Rugged Gate Oxide Technology
n Lower Input Capacitance
ID = 28 A
n Improved Gate Charge
n Extended Safe Operating Area
D2-PAK
n 175℃ Operating Temperature
n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V
I2-PAK
2
n Lower RDS(ON) : 0.041 Ω (Typ.)
1
1
2
3
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
VDSS
ID
Characteristic
Value
Drain-to-Source Voltage
100
Continuous Drain Current (TC=25℃)
28
Continuous Drain Current (TC=100℃)
19.8
IDM
Drain Current-Pulsed
VGS
Gate-to-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
①
TJ , TSTG
TL
V
A
110
A
±20
V
②
523
mJ
①
28
A
①
10.7
mJ
③
6.5
V/ns
3.8
W
Total Power Dissipation (TA=25℃) *
PD
Units
Total Power Dissipation (TC=25℃)
107
W
Linear Derating Factor
0.71
W/℃
Operating Junction and
- 55 to +175
Storage Temperature Range
℃
Maximum Lead Temp. for Soldering
300
Purposes, 1/8? from case for 5-seconds
Thermal Resistance
Symbol
Characteristic
Typ.
Max.
RθJC
Junction-to-Case
--
1.4
RθJA
Junction-to-Ambient *
--
40
RθJA
Junction-to-Ambient
--
62.5
Units
℃/W
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. B1
2001 Fairchild Semiconductor Corporation
1
N-CHANNEL
POWER MOSFET
IRFW/I540A
Electrical Characteristics (TC=25℃ unless otherwise specified)
Symbol
Characteristic
BVDSS
Drain-Source Breakdown Voltage
ΔBV/ΔTJ
VGS(th)
IGSS
IDSS
RDS(on)
Min. Typ. Max. Units
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
100
--
--
--
0.11
--
V/℃
2.0
--
4.0
V
--
--
100
VDS=5V,ID=250μA
VGS=20V
VGS=-20V
--
-100
--
10
--
--
100
--
--
0.052
Ω
VGS=10V,ID=14A
④
--
S
VDS=40V,ID=14A
④
Forward Transconductance
--
22.56
Input Capacitance
--
1320 1710
Coss
Output Capacitance
--
325
380
Crss
Reverse Transfer Capacitance
--
148
170
td(on)
Turn-On Delay Time
--
18
50
Rise Time
--
18
50
Turn-Off Delay Time
--
90
180
Fall Time
--
56
120
tf
See Fig 7
--
gFS
td(off)
nA
VGS=0V,ID=250μA
ID=250μA
--
Ciss
tr
V
Test Condition
Qg
Total Gate Charge
--
60
78
Qgs
Gate-Source Charge
--
10.8
--
Qgd
Gate-Drain(밠iller? Charge
--
27.9
--
μA
pF
VDS=100V
VDS=80V,TC=150℃
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=50V,ID=28A,
ns
RG=9.1Ω
See Fig 13
④⑤
VDS=80V,VGS=10V,
nC
ID=28A
See Fig 6 & Fig 12 ④ ⑤
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
IS
Continuous Source Current
Min. Typ. Max. Units
--
--
28
ISM
Pulsed-Source Current
①
--
--
110
VSD
Diode Forward Voltage
④
--
--
1.5
trr
Reverse Recovery Time
--
132
Qrr
Reverse Recovery Charge
--
0.63
A
Test Condition
Integral reverse pn-diode
in the MOSFET
V
TJ=25℃,IS=28A,VGS=0V
--
ns
TJ=25℃,IF=28A
--
μC
diF/dt=100A/μs
④
Notes ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=1mH, IAS=28A, VDD=25V, RG=27Ω, Starting TJ =25℃
③ ISD≤28A, di/dt≤400A/μs, VDD≤BVDSS , Starting TJ =25℃
④ Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2%
⑤ Essentially Independent of Operating Temperature
2
N-CHANNEL
POWER MOSFET
IRFW/I540A
Fig 1. Output Characteristics
102
Fig 2. Transfer Characteristics
102
VGS
15V
10 V
8.0 V
7.0 V
6.0 V
5.5V
5.0 V
Bottom : 4.5V
ID , Drain Current [A]
ID , Drain Current [A]
Top :
101
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
0
10
10-1
100
175 oC
101
25 oC
- 55 oC
100
101
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
0.08
102
IDR , Reverse Drain Current [A]
RDS(on) , [ Ω ]
Drain-Source On-Resistance
@ Notes :
1. VGS = 0 V
2. VDS = 40 V
3. 250 µs Pulse Test
VGS = 10 V
0.06
0.04
VGS = 20 V
0.02
o
@ Note : TJ = 25 C
0.00
0
30
60
90
101
25 oC
100
0.4
120
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
175 oC
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
2500
C iss
1500
C oss
1000
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
C rss
500
00
10
101
VDS , Drain-Source Voltage [V]
VDS = 20 V
10
VGS , Gate-Source Voltage [V]
Capacitance [pF]
2000
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
VDS = 50 V
VDS = 80 V
5
@ Notes : ID =28.0 A
0
0
10
20
30
40
50
60
70
QG , Total Gate Charge [nC]
3
N-CHANNEL
POWER MOSFET
IRFW/I540A
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
3.0
RDS(on) , (Normalized)
Drain-Source On-Resistance
BVDSS , (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
0.8
-75
@ Notes :
1. VGS = 0 V
2. ID = 250 µA
-50
-25
0
25
50
75
100
125
150
175
2.5
2.0
1.5
1.0
@ Notes :
1. VGS = 10 V
2. ID = 14.0 A
0.5
0.0
-75
200
-50
-25
TJ , Junction Temperature [oC]
Fig 9. Max. Safe Operating Area
25
50
75
100
125
150
175
200
Fig 10. Max. Drain Current vs. Case Temperature
103
30
Operation in This Area
is Limited by R DS(on)
ID , Drain Current [A]
25
102
10 µs
100 µs
1 ms
10 ms
101
DC
@ Notes :
1. TC = 25 oC
100
10-1 0
10
20
15
10
5
2. TJ = 175 oC
3. Single Pulse
101
0
25
102
50
75
100
125
150
175
Tc , Case Temperature [oC]
VDS , Drain-Source Voltage [V]
Thermal Response
Fig 11. Thermal Response
100
D=0.5
@ Notes :
1. Zθ J C (t)=1.4 o C/W Max.
2. Duty Factor, D=t1 /t2
3. TJ M -TC =PD M *Zθ J C (t)
0.2
0.1
10- 1
0.05
0.02
0.01
PDM
t1
single pulse
t2
θ
Z JC(t) ,
ID , Drain Current [A]
0
TJ , Junction Temperature [oC]
10- 2 - 5
10
10- 4
10- 3
10- 2
10- 1
t1 , Square Wave Pulse Duration
100
101
[sec]
4
N-CHANNEL
POWER MOSFET
IRFW/I540A
Fig 12. Gate Charge Test Circuit & Waveform
* Current Regulator ”
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
Qgs
VGS
Qgd
DUT
3mA
R1
R2
Current Sampling (IG)
Resistor
Current Sampling (ID)
Resistor
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout
Vout
90%
VDD
Vin
( 0.5 rated VDS )
RG
DUT
Vin
10%
10V
td(on)
tr
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
LL
VDS
Vary tp to obtain
required peak ID
BVDSS
IAS
ID
RG
C
DUT
ID (t)
VDD
VDS (t)
VDD
10V
tp
tp
Time
5
N-CHANNEL
POWER MOSFET
IRFW/I540A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
--
IS
L
Driver
VGS
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by 밨G
• IS controlled by Duty Factor 밆?
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
6
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Definition of Terms
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Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4