FPF1C2P5BF07A F1 Module solution for PV-Application

FPF1C2P5BF07A
F1 Module solution for PV-Application
General Description
Fairchild's brand-new DC-DC module is designed for a power
stage that needs more compact design. And the Press-fit technology provides simple and reliable mounting. This module is optimized for the application such as solar inverter where a high
efficiency and robust design are needed.
Electrical Features
• High Efficiency
Package Code: F1
• Low Conduction and Switching losses
• Low RDS(ON) : 90 mΩ max.
• Fast Recovery Body Diode
• Built-in NTC for temperature monitoring
Mechanical Features
• Compact size : F1 Package
• Press-fit contact technology
Applications
• Solar Inverter
Certification
• UL approved (E209204)
Internal Circuit Diagram
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Rating
Units
VDSS
Symbol
Drain-Source Voltage
Description
650
V
VGSS
Gate-Source Voltage
± 20
V
ID
Continuous Drain Current
@ TC = 25°C
36
A
@ TC = 80°C
27
A
Limited by TJ max.
156
A
IDM
Pulsed Drain Current
IS
Continuous Source-Drain Forward Current
36
A
ISM
Maximum Pulsed Source-Drain Forward Current
156
A
PD
Maximum Power Dissipation
250
W
TJ
Operating Junction Temperature
-40 to +150
°C
©2014 Fairchild Semiconductor Corporation
FPF1C2P5BF07A Rev. C2
@ TC = 25°C
1
www.fairchildsemi.com
FPF1C2P5BF07A F1 Module solution for PV-Application
July. 2014
Symbol
TC = 25°C unless otherwise noted. (Continued)
Description
Rating
Units
-40 to +125
°C
2500
V
Module
TSTG
Storage Temperature
VISO
Isolation Voltage
Iso._Material
Internal Isolation Material
FMOUNT
Mounting Force per Clamp
Weight
@ AC 1MIN
Al2O3
20 to 50
Typ.
Creepage
Clearance
N
22
g
Terminal to Heatshink
11.5
mm
Terminal to Terminal
6.3
mm
Terminal to Heatshink
10.0
mm
Terminal to Terminal
5.0
mm
Package Marking and Ordering Information
Device
Device Marking
Package
Packing Type
Quantity / Tray
FPF1C2P5BF07A
FPF1C2P5BF07A
F1
Tray
22
©2014 Fairchild Semiconductor Corporation
FPF1C2P5BF07A Rev. C2
2
www.fairchildsemi.com
FPF1C2P5BF07A F1 Module solution for PV-Application
Absolute Maximum Ratings
Symbol
TC = 25oC unless otherwise noted.
Parameter
Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 1 mA
650
-
-
V
IDSS
Zero Gate Voltage Drain Current
VDS = 650 V, VGS= 0 V
-
-
25
μA
IGSS
Gate-Body Leakage Current, Forward
VGS = 20 V, VDS= 0 V
-
-
2.5
μA
On Characteristics
VGS(th)
Gate-Source Threshold Voltage
VGS = VDS, ID= 250 μA
-
3.8
-
V
RDS(ON)
Static Drain-Source On-Resistance
ID = 27 A, VGS = 10 V
-
-
90
mΩ
ID = 27 A, VGS = 10 V @TC = 125°C
-
135
-
mΩ
ID = 47 A, VGS = 10 V
-
76
-
mΩ
VCC = 380 V
ID = 27A
VGS = 10 V
RG(ON) = 51 Ω
RG(OFF) = 3 Ω
Inductive Load
TC = 25 °C
-
192
-
ns
-
75
-
ns
-
140
-
ns
-
13
-
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
EON
Turn-On Switching Loss per Pulse
EOFF
Turn-Off Switching Loss per Pulse
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
EON
Turn-On Switching Loss per Pulse
EOFF
Turn-Off Switching Loss per Pulse
Qg(total)
Total Gate Charge
RθJC
Thermal Resistance of Junction to Case
VCC = 380 V
ID = 27 A
VGS = 10 V
RG(ON) = 51 Ω
RG(OFF) = 3 Ω
Inductive Load
TC = 125 °C
-
2.29
-
mJ
-
58
-
μJ
-
159
-
ns
-
82
-
ns
-
156
-
ns
-
13
-
ns
-
4.06
-
mJ
-
65
-
μJ
VDS = 380 V, VGS = 0V...+10 V,
ID = 27 A
-
155
-
nC
per Chip
-
-
0.5
°C/W
ISD = 27 A, VGS = 0 V
-
-
1.5
V
ISD = 47 A, VGS = 0 V
-
1.3
-
V
ISD = 27 A
dIF/dt = 364 A/μs
-
109
-
39
-
A
-
2000
-
nC
-
179
-
55
-
A
-
4802
-
nC
Switching Characteristics : Body Diode
VSD
Source-Drain Diode Forward Voltage
trr
Reverse Recovery Time
Irr
Reverse Recovery Current
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Irr
Reverse Recovery Current
Qrr
Reverse Recovery Charge
ISD = 27A
dIF/dt = 320 A/μs @TC = 125°C
ns
ns
NTC
RNTC
Rated Resistance
TC = 25°C
-
10
-
kΩ
TC = 100°C
-
936
-
Ω
Tolerance
TC = 25°C
-3
-
+3
%
PD
Power Dissipation
TC = 25°C
-
-
20
mW
BValue
B-Constance
B25/50
-
3450
-
K
B25/100
-
3513
-
K
©2014 Fairchild Semiconductor Corporation
FPF1C2P5BF07A Rev. C2
3
www.fairchildsemi.com
FPF1C2P5BF07A F1 Module solution for PV-Application
Electrical Characteristics
Fig 1. On-Region Characteristics
Fig 2. On-Resistance Variation
vs. Drain Current and Gate Voltage
160
0.20
140
120
100
RDS(ON) [Ω],
ID, Drain Current[A]
VGS = 10 V
VGS = 20 V
20 V
15 V
10 V
8V
6V
80
60
40
20
0
* Note:
1. 250μs pulse test
0
5
10
15
Drain to Source On-Resistance
VGS =
0.16
0.12
0.08
0.04
20
0
40
VDS, Drain-Source Voltage[V]
Fig 3. On-Resistance Variation vs. Temperature
TC = 25°C
TC = 80°C
TC = 125°C
2.00
IS, Reverse Drain Current [A]
Drain to Source On-Resistance
RDS(ON) [Ω], [Normalized]
160
150
1.75
1.50
1.25
1.00
0.75
0.50
-50
* Notes:
1. VGS = 10 V
2. ID = 27 A
-25
0
25
50
75
100
125
150
TC, Case Temperature [°C]
120
90
60
30
0
0.3
175
0.6
0.9
1.2
1.5
1.8
2.1
VSD, Body Diode Forward Voltage [V]
Fig 5. Turn-Off Loss vs. Drain Current
Fig 6. Turn-On Loss vs. Drain Current
6
100
* Notes:
1. with an inductive load
2. VDS = 380 V
3. VGS = 10 V
4. Rg(on) = 51 Ω
5. Rg(off) = 3 Ω
TC = 125°C
60
40
TC = 25°C
20
0
5
10
15
©2014 Fairchild Semiconductor Corporation
FPF1C2P5BF07A Rev. C2
20
25
ID, Drain Current [A]
30
* Notes:
1. with an inductive load
2. VDS = 380 V
3. VGS = 10 V
4. Rg(on) = 51 Ω
5. Rg(off) = 3 Ω
5
Eon, Turn-on Loss [mJ]
80
Eoff, Turn-off Loss [uJ]
120
Fig 4. Body Diode Forward Voltage Variation
vs. Source Current and Temperature
2.25
0
80
ID, Drain Current [A]
4
3
2
TC = 25°C
1
0
35
4
TC = 125°C
0
5
10
15
20
25
ID, Drain Current [A]
30
35
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FPF1C2P5BF07A F1 Module solution for PV-Application
Typical Performance Characteristic
Fig 7. Turn-Off Loss
vs. Turn-Off Gate Resistor Values
Fig 8. Transient Thermal Response Curve
160
400
1
0.5
TC = 125°C
ZθJC(t), Thermal Response [°C/W]
ID, Drain Current[A]
Eoff, Turn-off Loss [uJ]
* Notes:
VGS
=
20V
1. with15V
an inductive load
140
2. VDS = 380 V, ID = 27 A
10V
3. VGS = 10 V
300
120
4. Rg(on)8V= 51 Ω
6V
100
200
80
TC = 25°C
60
100
40
20
0
0 0
* Note:
1. 250μs pulse test
5 5
10
1510
20
15
25
Rg(off), Off Resistance
[Ω]
, Drain-Source
Voltage[V]
30
0.1 0.3
0.1
0.05
0.01
0.02
VDS
t1
0.005
1E-3
1E-4
1E-5
2035
PDM
0.01
Single Pulse
1E-4
t2
* Notes :
1. ZθJC(t) = 0.5 °C/W Max.
2. Duty Factor, D = t1/t2
3. TJ - TC = PDM*ZθJC(t)
1E-3
0.01
0.1
1
t1, Rectangular Pulse Duration [sec]
Fig 9. Typical NTC Value vs. Temperature
RNTC, NTC Resistance [kΩ]
50
10
1
0.2
0
25
50
75
©2014 Fairchild Semiconductor Corporation
FPF1C2P5BF07A Rev. C2
100
125
TC, Case Temperature [°C]
150
5
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FPF1C2P5BF07A F1 Module solution for PV-Application
Typical Performance Characteristic (Continued)
FPF1C2P5BF07A F1 Module solution for PV-Application
Internal Circuit Diagram
DC+
DC+
M2
M4
S5
G5
G2
G4
S2
S4
OUT1
OUT2
OUT3
OUT1
OUT2
OUT3
M1
M3
G1
G3
S1
S3
RTN
M5
T1
T2
RTN
Package Outlines [mm]
©2014 Fairchild Semiconductor Corporation
FPF1C2P5BF07A Rev. C2
6
www.fairchildsemi.com
FPF1C2P5BF07A F1 Module solution for PV-Application
©2014 Fairchild Semiconductor Corporation
FPF1C2P5BF07A Rev. C2
7
www.fairchildsemi.com