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Si/Ge⷟⭯䛭䛴᭯ຝ㈻㔖:SOI䛾䛴㐠
៖ኬ⌦ᕝ䚭ᒜහ䚭ῗ
2006ᖳ3᭮11᪝
᪂
≁ᏽ㡷ᇡ䚸ḗୠ௥㔖Ꮔ䜻䝣䝩䝰䞀䝃䡗㔖Ꮔ䝋䜺䜨䝷ᡥἪ䛴㛜Ⓠ䚹
ᖲᠺ䠃䠉ᖳᗐᠺᯕሒ࿈◂✪ఌ
䟺䟺㈀䟻ᅗ㝷㧏➴◂✪ᡜ䟻
•◂✪⫴ᬊ䟺SOI䟻
•◂✪┘Ⓩ
•䝦䝋䝯
•⤎ᯕ
•䜄䛮䜇
◂✪⫴ᬊ(SOIᵋ㏸)
MOSFET (metal oxide semiconductor field effect transistor)
䝅䝧䝑䝯㡷ᇡ
Gate
insulator
䜶䞀䝌
㻔㻓㻓㻃㼑㼐㻡
䝍䝰䜨䝷
䝁䞀䜽
SiO2
Silicon on Insulator (SOI)
ฺⅤ:
•఩䝮䞀䜳㞹Ὦ
•఩ᐞ⏍ᐖ㔖
•఩ᾐ㈕㞹ງ
•㧏࿔ἴິష
Si
>>1µm
㏳ᖏ䛴Siᇱᯀ
⌟≟䛭䛵㧏ᛮ⬗CPU䛱౐⏕:
•IBM Power䚮PowerPC(G5) (Mass production)
•AMD Opteron (Mass production)
•Toshiba, SONY, IBM CELL (2005モషⓆ⾪)
◂✪⫴ᬊ(SOI㈠ᩩ)
䚸᲻ᕖ๙ୌ䚮௙䚮ἀ䝊䜳䝏䜯䝯䝰䝗䝩䞀 vol.70 No.4 p.60(2003)䚹䜎䜐
40nm
モష⣪Ꮔ䚭䚭䚭䚭䚭BOX:䚭Buried OXide
◂✪┘Ⓩ
⏻䜄䜑䛙䛮䛴䛰䛊᚜⣵໩䛴Ὦ䜒
䚭䚭ᕰ㈅ဗ䚭䚭䚭䚭モషဗ䚭䚭䚭䚭᭩඙❻
SOIཉ䚭䚭100nm䠐䚭䚭䠐10nm 䚭䚭 1nm䠐*
(*හ⏛䚮௙䚮IEDM2003)
ᩐnm⛤ᗐ䛭䜈᭯ຝ㈻㔖㎾జ䛱ᇱ䛫䛕よᯊ䚮スゝ䛒⾔䜕
䜒䜑䛙䛮䛒ኣ䛊䛒䚮⷟䛕䛰䜒䛶ཋ⌦Ⓩ䛱◒⥚䛟䜑䛵䛠䚯
•nm䜽䜵䞀䝯䛴㛚䛞㎲䜇䛵㞹Ꮔ㍲㏞≁ᛮ䛱䛯䛴䜎䛌䛰
ᙫ㡢䜘୙䛎䜑䛑䠑
•᭯ຝ㈻㔖㎾జ䛵䛯䛙䜄䛭ᠺ䜐❟䛪䛑䠑
䝦䝋䝯(I)
Ề⣪⤂❻ (1x1) slab model
ౚ䠌<䠂䠂䠃>㛚䛞㎲䜇䝦䝋䝯
Ề⣪⤂❻
Si/Ge slab
䠆ཋᏄᒒ
Ề⣪⤂❻
ฺⅤ䠌༎nm௧୕ཉ䛛䛴⣌䜘᡽䛎䜑
࿔᭿Ⓩሾ⏲᮪௲
䝦䝋䝯(II)
㛚䛞㎲䜇᪁ྡྷ
┷✭ᒒ
<001>
1.1nm
<111>
1.0nm
<110>
1.2nm
Si
0.68-35nm
䚭5-257䚭Si
0.95-30nm
䚭7-193䚭Si
0.58-13nm
6-130 Si
Ge
0.69-17.9nm
5-129 Ge
0.96-15.4nm
6-96 Ge
•LDA,GGA䟽᧻䝡䝊䝷䜻䝧䝯Ἢ
•᭯ຝ㈻㔖ゝ⟤: 䠈ḗኣ㡧ᘟ䛾䛴ᩐೋ䝙䜧䝇䝊䜧䝷䜴
•᭯ຝ㈻㔖㎾జ䛱䜎䜑よᯊ䛵䚮䝔䝯䜳䛴᭯ຝ㈻㔖
䜘ᇱ䛱㛚䛞㎲䜇ᖲ㟻䛱ᑏᙫ䛝䛥᭯ຝ㈻㔖䜘౐⏕䚯
㛚䛞㎲䜇᫤䛴Si & Ge㞹Ꮔ䝡䜵䝇䝌
<110>㛚䛞㎲䜇
Si Bulk
z
ఎᑙమୖ❻
Ge Bulk
<111>㛚䛞㎲䜇
melong = 0.96
ఎᑙమୖ❻
trans
e
m
= 0.20
<111>㛚䛞㎲䜇
<001>㛚䛞㎲䜇
<001>㛚䛞㎲䜇
⤎ᯕ: Si(001) 17 Siᒒ (2.2nm)
Brillouin zone
•Band gap䛴ᣉኬ(band gap shift)
•6㔔electron pockets䛴ฦ⿛(valley shift)
•ΓⅤ௛㎾䛴䝔䝷䝍␏᪁ᛮ
H䛱㛭㏻䛟䜑≟ឺ
M’
X’
<110>
Γ
5
0
-5
-10
Γ
X’
M’
Γ
’
<100>
’
᭯ຝ㈻㔖䠌Si<001>㛚䛞㎲䜇
melong = 0.96
ఎᑙᖈୖ❻
metrans = 0.20
㛚䛞㎲䜇᪁ྡྷ䛴᭯ຝ㈻㔖
᭯ຝ㈻㔖䠌Si<111>㛚䛞㎲䜇
L
T
᭯ຝ㈻㔖䠌Ge<001> & <111>㛚䛞㎲䜇
EMA:
Effective mass approximation
<001>㛚䛞㎲䜇
L
<111>㛚䛞㎲䜇
➴᪁Ⓩ
T
ࡱ࡛ࡴ
•䠃䠂nm䜎䜐ཉ䛊ሔྙ䛱䛵䚮᭯ຝ㈻㔖㎾జ䛒䜎䛕ᠺ❟䛟䜑䚯
•᭯ຝ㈻㔖䛴୹㍂᪁ྡྷ䛾䛴㛚䛞㎲䜇䛭䛵䚮䠃䠂nm௧ୖ䛭䜈
ཉ䛛౪Ꮛᛮ䛵䜁䛮䜙䛯ぜ䜏䜒䛰䛊䚯䟺㟸ᑊみᠺฦ䛴᭯↋䟻
•ኣ䝔䝷䝍䜄䛭ᣉᘿ䛟䜒䛶䚮ᏽᛮⓏ䛱䛵᭯ຝ㈻㔖㎾జ䛵ఎ
ᑙᖈୖ❻䛴㞹Ꮔ≟ឺ䜘㟸ᖏ䛱䜎䛕オ㏑䛝䛬䛊䜑䚯
䟺䜬䝑䝯䜲䞀‵న䟻
•Ge<001>䛭䛵ᅸ⦨ᚺງ䜘༰ຊ䛡䛠䛱䚮㛚䛞㎲䜇䛱䜎䛩䛬
⛛ິᗐ䛒ቌኬ䛟䜑ྊ⬗ᛮ䛒䛈䜑䚯䚭䚭䚭䚭㧏ᛮ⬗䝋䝔䜨䜽
௑ᚃ
•ṅ⣌䚮⏲㟻䟺⾪㟻䟻䛴ᙫ㡢