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サブスレッショルド LSI のためのオンチップ電源
6E9P=7LO@ LSI #(#2Q<=FÕ« 9/=<Q4P3KPR; 7NR:P3KPR;#£Ç On-Chip Power Supply for Subthreshold - operated LSIs ¯ ¼Z TÎ S §Y wX Ô [ Hideto Shimada Ken Ueno Tetsuya Asai Yoshihito Amemiya q¨Ê Ó ~³±´³ Department of Electrical Engineering, Hokkaido University Vex Õ{ 0.5 V \Uo6E9P=7LO@ LSI #( #2Q<=FÕ«.ÃÀÌÕ{. 0.5 V \U"Ò {,"$9/=<Q4P3KPR;(SWR) 7NR:P 3KPR;(SR).`®,#W¹#o_.7GKPR 7LQ¿Õmn.£Ç Φ f R RC Φ C ×g^#¡Ø ×£ÇxÆ#¡Ø zÙ Õ«xÆ#¡ Vout Φ1 Vex Φ 2 CS Φ2 CS Φ2 CS Φ2 CS Φ2 CS M1 Vex Vout Φ1 (a) SWR (b) SR z 2 P3KPR;xÆ $ %[ % ] 80 60 "# 40 0 10 μA ! ! 100 μA z 3 Õmn ! ! "# 20 4 1 mA 10 mA Ľզ#Ñc^n$P3KPR; xÆ#n¸tn$lxÆ.u'g^#n 0.6 &$'%[ V ] xÆo_#7GKPR7LQa.z 3 z 4 "² ÌÕ{ Vex 3 V ×N<0HÕ¤Ø.>C/ 9DMIR;"$ 0.18m-CMOS #Öº{ MOSFET # f.® & LSI 5R?ÉÐ. 20 ns ,) "JA;xÆ.Ã×JA;NQ427PR;#¢ = 11, R = 4.5 M, C = 0.1 pF Ø! SWR #Ï CS $ 50 pFĽ LSI #Ï$ 500 pF z 3 $Õmn.²SWR #¸tn$Ľզ" )o^n"£%!+] -$ VCO .u'lxÆ#©ÅÕm ") ,SWR SR #imÕ{ N=FO.Ľզ Iout #Ñ z 4 "²imÕ{$ 0.45 V +-$T Â#5R?È.,#"¾!f,SWR $Ä ½Õ¦. ,("$Öv¥9/=<Q4¾ ,Öv¥$Õ½hÍjVrj"!,#( Õ¦"!, im$ 0.45 V .dª, 3 P3KPR; Ïj{|# SWR (zÚ(a)) MOS "), SR (zÚ(b)) .ÁSWR #9/=<Q4 es (1, 2) $ VCO b·#lÕ{9/=< Q4v¥.imÕ{ Vout .l,VCO Õ¦lNQ427PR;×5R?ÈJA;® $kØ .`®#Õ¦.zÚ#£ÇxÆlv¥. pSSR $?MQ89; M1 #5R?Õ {. Vout .l 2 6E9P=7LO@ LSI $ ]1BO3Ro¾ ,##o_È*-,µyb·Õ{. "Ã,#(zÙ#)!Õ«xÆ.® , ÌÕ{ Vex .P3KPR; Vout "Ò{Ľ LSI " b·,#Õ{ Vout NQ427PR;.o LSI 5R?È.JA;,NQ4°v¥ f .}¬ # RC £Ç#¶.Õ{es P3K PR;"Ë,f = 1/(RC) !,)" Vout #f»o Ã-, Vex Vout &$' 0.5 0.4 0.3 &$' ()* 100 10 ()* 1 10 μA 100 μA z 4 imÕ{ 1 mA N=FO 0.1 10 mA ()*%[ mV ]