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Device Modeling Report
Device Modeling Report COMPONENTS : VOLTAGE COMPARATOR PART NUMBER : LM311N/14 MANUFACTURER : NATIONAL Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004 BJT MODEL Pspice model parameter IS BF CJC TF TR Model description Saturation Current Ideal Maximum Forward Beta Zero-bias Collector-Base Junction Capacitance Forward Transit Time Reverse Transit Time DIODE MODEL Pspice model Model description parameter IS Saturation Current RS Series Resistance All Rights Reserved Copyright (c) Bee Technologies Inc. 2004 Output Low Voltage Simulation result Simulation Evaluation Circuit U1 NC GND NC IN+ NC + NC IN- V4 1.55 V1 V3 V+ - NC NC V- O/P BAL V2 BAL/STR I1 1.56 LM311N 50m -15 15 0 Compasion Table IO = 50mA Measurement Simulation %Error Vol (V) 0.75 0.749735 -0.035 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004 Response time (Rise time and Transition time) Simulation result OUTPUT Evaluation Circuit U2 NC GND NC IN+ NC + NC IN- V1 = -5m V2 = 100m TD = 0 TR = 0 TF = 0 PW = 5u PER = 10u V5 - V+ NC NC V- O/P BAL Tr BAL/STR V7 RL1 V6 LM311N 500 -15 15 V8 5 0 Compasion Table Rising delay time (us) Transition time (us) Measurement 0.125 0.140 Simulation 0.124079 0.13897 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004 % Error -0.737 -0.736 Response time (Falling time) Simulation result OUTPUT Evaluation Circuit U1 NC GND NC IN+ NC + NC IN- V1 = -100m V2 = 5m TD = 0 TR = 0 TF = 0 PW = 5u PER = 10u V1 - V+ NC NC V- O/P BAL Tf BAL/STR RL V4 LM311N 500 -15 V2 V3 15 5 0 Compasion Table Falling delay time (us) Measurement Simulation % Error 0.175 0.174974 -0.015 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004 Input Offset Voltage Characteristics Simulation result Simulation Evaluation Circuit U2 output1 NC IN+ NC IN- 1k - V+ NC NC V- O/P BAL V1 0 NC + R1 NC GND BAL/STR V2 -15 V3 LM311N 15 0 Compasion Table Vio(mV) Measurement Simulation %Error 2 1.9965 -0.175 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004 Av Characteristics Simulation result Simulation Evaluation Circuit U2 output V2 1.9965m V1 0Vdc GND NC IN+ NC IN- R3 1k NC + in NC V+ - NC NC V- O/P V4 BAL BAL/STR V3 -15 15 LM311N 0 Av = 24.880 / 124.733u Compasion Table RL = 1k Measurement Simulation %Error Av (V/mV) 200 199.466 -0.267 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004 Input Bias Current Characteristics Simulation result Ib IIO Evaluation Circuit U2 NC GND NC IN+ NC + NC IN- V1 V2 - V+ NC NC V- O/P BAL BAL/STR R1 1k V4 0Vdc 0Vdc V3 LM311N 15 -15 0 Compasion Table Ib (nA) IIO (nA) Measurement 100 6 Simulation 100.059 6.0075 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004 % Error 0.059 0.125